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TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
Preferred Devices
Plastic Medium-Power Complementary Silicon Transistors
Designed for general-purpose amplifier and low-speed switching applications.
Features
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* High DC Current Gain - *
= 2500 (Typ) @ IC = 4.0 Adc Collector-Emitter Sustaining Voltage - @ 100 mAdc VCEO(sus) = 60 Vdc (Min) - TIP120, TIP125 = 80 Vdc (Min) - TIP121, TIP126 = 100 Vdc (Min) - TIP122, TIP127 Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 4.0 Vdc (Max) @ IC = 5.0 Adc Monolithic Construction with Built-In Base-Emitter Shunt Resistors Pb-Free Packages are Available* hFE
DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80-100 VOLTS, 65 WATTS
MARKING DIAGRAM
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* * *
1
TO-220AB CASE 221A STYLE 1 2 3
TIP12xG AYWW
TIP12x x A Y WW G
= Device Code = 0, 1, 2, 5, 6, or 7 = Assembly Location = Year = Work Week = Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use and best overall value.
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2005
1
September, 2005 - Rev. 6
Publication Order Number: TIP120/D
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIII I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIII I IIIIII IIIIIIIIIIIIIIIIIIIIIIIII III IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII
MAXIMUM RATINGS
Rating Symbol VCEO VCB VEB IC IB TIP120, TIP125 60 60 TIP121, TIP126 80 80 TIP122, TIP127 100 100 Unit Vdc Vdc Vdc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 5.0 5.0 8.0 Collector Current - Continuous - Peak Base Current 120 mAdc W W/_C W W/_C mJ _C Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD PD E 65 0.52 2.0 0.016 50 Unclamped Inductive Load Energy (Note 1) Operating and Storage Junction, Temperature Range TJ, Tstg - 65 to + 150
THERMAL CHARACTERISTICS
Characteristic
Symbol RqJC RqJA
Max
Unit
Thermal Resistance, Junction-to-Case
1.92 62.5
_C/W _C/W
Thermal Resistance, Junction-to-Ambient
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W
ORDERING INFORMATION
Device TIP120 TIP120G TIP121 TIP121G TIP122 TIP122G TIP125 TIP125G TIP126 TIP126G TIP127 TIP127G Package TO-220 TO-220 (Pb-Free) TO-220 TO-220 (Pb-Free) TO-220 TO-220 (Pb-Free) TO-220 TO-220 (Pb-Free) TO-220 TO-220 (Pb-Free) TO-220 TO-220 (Pb-Free) Shipping 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail
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PD, POWER DISSIPATION (WATTS)
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III IIIIIIIIIIIIIIIIIIIIIIIIII II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I II I I II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
OFF CHARACTERISTICS
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz
Small-Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
Base-Emitter On Voltage (IC = 3.0 Adc, VCE = 3.0 Vdc)
Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 12 mAdc) (IC = 5.0 Adc, IB = 20 mAdc)
DC Current Gain (IC = 0.5 Adc, VCE = 3.0 Vdc) (IC = 3.0 Adc, VCE = 3.0 Vdc)
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0)
Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0)
Collector-Emitter Sustaining Voltage (Note 2) (IC = 100 mAdc, IB = 0)
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
Characteristic
1.0 20
2.0 40
3.0 60
TA TC 4.0 80
0
0
0
20
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Figure 1. Power Derating
TIP125, TIP126, TIP127 TIP120, TIP121, TIP122
60 80 100 T, TEMPERATURE (C)
TIP120, TIP125 TIP121, TIP126 TIP122, TIP127
TIP120, TIP125 TIP121, TIP126 TIP122, TIP127
TIP120, TIP125 TIP121, TIP126 TIP122, TIP127
TA
3 TC 120 VCEO(sus) Symbol VCE(sat) VBE(on) ICBO ICEO IEBO Cob hFE hfe 140 160 1000 1000 Min 60 80 100 4.0 - - - - - - - - - - - - Max 300 200 2.5 2.0 4.0 2.0 0.2 0.2 0.2 0.5 0.5 0.5 - - - - - - mAdc mAdc mAdc Unit Vdc Vdc Vdc pF - -
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
5.0 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA RC MSD6100 USED BELOW IB 100 mA
TUT V2 approx +8.0 V 0 V1 approx -12 V tr, tf 10 ns DUTY CYCLE = 1.0% 51 RB D1 +4.0 V 25 ms
for td and tr, D1 is disconnected and V2 = 0 For NPN test circuit reverse all polarities.
VCC -30 V
3.0 2.0
SCOPE
ts
PNP NPN
t, TIME ( s)
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.1
tf
8.0 k 120
VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 0.2
tr
td @ VBE(off) = 0 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10
Figure 2. Switching Times Test Circuit
Figure 3. Switching Times
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 0.7 0.5 0.3 0.2 0.1
D = 0.5
0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 50 100 200 500 1.0 k P(pk) ZqJC(t) = r(t) RqJC RqJC = 1.92C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) ZqJC(t) DUTY CYCLE, D = t1/t2
0.07 0.05 0.03 0.02
0.01 0.01
Figure 4. Thermal Response
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TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
20 IC, COLLECTOR CURRENT (AMP) 10 5.0 2.0 1.0 0.5 0.2 0.1 500 ms dc TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED 1 ms @ TC = 25C (SINGLE PULSE) 5 ms SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 2.0 3.0 5.0 7.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 100 ms
0.05 0.02 1.0
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown
Figure 5. Active-Region Safe Operating Area
10,000 h fe , SMALL-SIGNAL CURRENT GAIN 5000 3000 2000 1000 500 300 200 100 50 30 20 10 1.0 2.0 TC = 25C VCE = 4.0 Vdc IC = 3.0 Adc
300 TJ = 25C 200 C, CAPACITANCE (pF)
Cob 100 70 50 PNP NPN 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Cib
PNP NPN 5.0 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 30 0.1
Figure 6. Small-Signal Current Gain
Figure 7. Capacitance
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TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
NPN TIP120, TIP121, TIP122
20,000 VCE = 4.0 V 10,000 hFE , DC CURRENT GAIN 5000 3000 2000 1000 500 300 200 0.1 TJ = 150C 25C -55 C hFE , DC CURRENT GAIN 10,000 7000 5000 3000 2000 1000 700 500 300 200 0.1 25C 20,000 VCE = 4.0 V
PNP TIP125, TIP126, TIP127
TJ = 150C
-55 C
0.2
0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
0.2
0.3
0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
Figure 8. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
3.0 TJ = 25C 2.6 IC = 2.0 A 4.0 A 6.0 A
3.0 TJ = 25C 2.6 IC = 2.0 A 4.0 A 6.0 A
2.2
2.2
1.8
1.8
1.4
1.4
1.0 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA)
20
30
1.0 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
3.0 TJ = 25C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS)
3.0 TJ = 25C 2.5
2.0 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.0 V 1.0 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
2.0
1.5
1.5
VBE @ VCE = 4.0 V VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
1.0
0.5 0.1
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 10. "On" Voltages
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TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
PACKAGE DIMENSIONS
TO-220 CASE 221A-09 ISSUE AA
-T- B
4
SEATING PLANE
F T S
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
Q
123
A U K
H Z L V G D N R J
STYLE 1: PIN 1. 2. 3. 4.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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TIP120/D

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